smd type transistors 1 www.kexin.com.cn 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1. gate 2. source 3. drain p-channel 1.8-v (g-s) mosfet KI2311DS features trenchfet power mosfets absolute maximum ratings ta = 25 parameter symbol 5secs steady state unit drain-source voltage v ds gate-source voltage v gs continuous drain current (t j =150 )*1,2 t a =25 -3.5 -3 t a =70 -2.8 -2.4 pulsed drain current i dm continuous source current (diode conduction)*1,2 i s -0.8 -0.6 maximum power dissipation *1,2 t a =25 0.96 0.71 t a =70 0.62 0.46 operating junction and storage temperature range t j ,t stg *1 surface mounted on fr4 board. *2 pulse width limited by maximum junction temperature. v a w -55to150 i d p d -8 8 thermal resistance ratings symbol typical maximum unit t 5sec 100 130 steady-state 140 175 maximum junction-to-foot (drain) steady-state r thjf 60 75 * surface mounted on fr4 board. /w parameter maximum junction-to-ambient * r thja
2 smd type transistors www.kexin.com.cn electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v (br)dss v gs =0v,i d =-10 a -8 v gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a -0.45 -8 v gate-body leakage i gss v ds =0v,v gs = 8v 100 na v ds = -6.4v, v gs =0v -1 v ds = -6.4v, v gs =0v,t j =55 -10 v ds -5 v, v gs =-4.5v -6 v ds -5 v, v gs =-2.5 v -3 v gs =-4.5v,i d = -3.5 a 0.036 0.045 v gs = -2.5v, i d = -3a 0.058 0.072 v gs = -1.8v, i d =-0.7a 0.096 0.120 forward transconductanceb g fs v ds =-5v,i d = -3.5 a 9.0 s schottky diode forward voltage* v sd i s =-0.8a,v gs =0v -1.2 v total gate charge q g 8.5 12 gate-source charge q gs 1.5 gate-drain charge q gd 2.1 input capacitance c iss 970 output capacitance c oss 485 reverse transfer capacitance c rss 160 turn-on delay time t d(on) 18 25 rise time t r 45 65 turn-off delay time t d(off) 40 60 fall time t f 45 65 * pulse test :pulse width 300 s,duty cycle 2% ns i dss zero gate voltage drain current r ds(on) drain source on state resistance* a v ds =-4v,v gs = -4.5v, i d =-3.5a v dd =-4v,r l =4 ,i d =-1a,v gen =- 4.5v,r g =6 * nc on-state drain current* i d(on) a v ds =-4v,v gs =0,f=1mhz pf marking marking c1 KI2311DS
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